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记忆扫描之前及期间的脑电位。

Brain potentials before and during memory scanning.

作者信息

Starr A, Dong C J, Michalewski H J

机构信息

Department of Neurology, University of California, Irvine 92717-4290, USA.

出版信息

Electroencephalogr Clin Neurophysiol. 1996 Jul;99(1):28-37. doi: 10.1016/0921-884x(96)95147-4.

Abstract

Brain potentials were recorded from 10 normal subjects engaged in a 3-item auditory verbal short-term memory task. A fixed interval (3 s) between the last memory item and the probe was compared to a random interval (1.8-4.2 s with a mean of 3 s). Subjects indicated by button press whether the probe was or was not a member of the memory-set. The same 3-item task was also presented as a counting task and required a button press to the "fourth stimulus' (the probe). The amplitudes of several slow potential shifts preceding and following the probe, and the amplitudes and latencies of the accompanying short duration components (N100, P200) were measured. When the probe appeared at a fixed interval, the amplitude of a slow negative potential in the 300 ms period preceding the probe was slightly larger in the memory than in the counting task. When the probe appeared at a random interval in the memory task, the slow negative shift preceding the probe was absent. Another slow negative shift that peaked at approximately 376 ms after the probe was present in the memory tasks but was absent in the counting task. The amplitude of a late positive shift that peaked at approximately 700 ms after the probe was not different within the memory tasks, or between the memory and counting tasks. N100 amplitude but not P200 amplitude was larger in the memory task when the probe occurred at a fixed than at a random interval. These results suggest that the amplitude of a slow negative shift preceding the probe was related primarily to a temporal expectancy for the appearance of the probe and to a lesser extent to memory processes. In contrast, a slow negative shift that followed the probe occurred only during the memory tasks.

摘要

对10名参与3项听觉言语短期记忆任务的正常受试者记录脑电活动。将最后一个记忆项目与探测刺激之间的固定间隔(3秒)与随机间隔(1.8 - 4.2秒,平均3秒)进行比较。受试者通过按键表明探测刺激是否属于记忆组。同样的3项任务也作为计数任务呈现,要求对“第四个刺激”(探测刺激)进行按键。测量了探测刺激前后几个慢电位变化的幅度,以及伴随的短持续时间成分(N100、P200)的幅度和潜伏期。当探测刺激在固定间隔出现时,探测刺激前300毫秒内慢负电位的幅度在记忆任务中比计数任务中略大。当探测刺激在记忆任务中随机间隔出现时,探测刺激前的慢负电位变化不存在。在记忆任务中存在另一个在探测刺激后约376毫秒达到峰值的慢负电位变化,而在计数任务中不存在。在探测刺激后约700毫秒达到峰值的晚期正电位变化的幅度在记忆任务中以及记忆任务与计数任务之间没有差异。当探测刺激在固定间隔出现时,记忆任务中的N100幅度比随机间隔出现时大,但P200幅度没有差异。这些结果表明,探测刺激前慢负电位变化的幅度主要与探测刺激出现的时间预期有关,在较小程度上与记忆过程有关。相比之下,探测刺激后的慢负电位变化仅在记忆任务中出现。

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