Mutation induction and mutation frequency decline in halogen light-irradiated Escherichia coli K-12 AB1157 strains.

The effects of halogen light irradiation on reversion of argE3-->Arg+ in E. coli K12 strain AB1157 and its mfd- mutant, and on mutation frequency decline (MFD) after transiently incubating irradiated bacteria under non-growing conditions were studied. The induction of mutations, the mutational specificity, and the MFD effect had the same characteristic features as those seen in E. coli B strains after irradiation with 254 nm UV light. MFD which is due to repair of premutagenic lesion in the transcribed strand of glnU gene and prevents mutations leading to supB formation, was not observed in halogen light-induced mutations in the mfd-1 strain. Overproduction of UmuD'C proteins led to a large increase in mutation frequency, which was much greater in mfd- than in mfd+ strains. In bacteria irradiated with halogen light and incubated immediately in a rich medium to express mutations, the formation of supB predominated strongly over that of supE(ochre) in mfd- cells but was at a similar level in mfd+ cells. Introduction of zcf117::Tn10 to AB1157 strain makes cells more sensitive to halogen light irradiation, whereas introduction of mfd-1 does not.