Takeuchi J, Nakamura H, Yamada H, Kita E, Tasaki A, Erata T
Institute of Applied Physics, University of Tsukuba, Ibaraki, Japan.
Solid State Nucl Magn Reson. 1997 Apr;8(2):123-8. doi: 10.1016/s0926-2040(96)01287-8.
Lattice defects in a compound semiconductor, gallium-arsenide are evaluated by two-dimensional nutation nuclear magnetic resonance. Especially in the case of indium doped gallium-arsenide, analysis of the nutation patterns indicates that the electric field gradient exists in the whole crystal. Asymmetry parameters and quadrupolar coupling constants are determined as approximately 1.0 and 93 kHz, respectively. These results suggest that the whole crystal is under slight strain. Through this work, it is demonstrated that a two-dimensional nutation nuclear magnetic resonance is the useful method to investigate the lattice defects in gallium-arsenide.
通过二维章动核磁共振对化合物半导体砷化镓中的晶格缺陷进行评估。特别是在铟掺杂的砷化镓的情况下，对章动模式的分析表明整个晶体中存在电场梯度。不对称参数和四极耦合常数分别确定为约1.0和93千赫兹。这些结果表明整个晶体处于轻微应变状态。通过这项工作，证明了二维章动核磁共振是研究砷化镓晶格缺陷的有用方法。
