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有丝分裂后神经元对X射线照射的反应:DNA损伤在神经元凋亡中的作用启示

Response of postmitotic neurons to X-irradiation: implications for the role of DNA damage in neuronal apoptosis.

作者信息

Gobbel G T, Bellinzona M, Vogt A R, Gupta N, Fike J R, Chan P H

机构信息

Brain Tumor Research Center and CNS Injury and Brain Edema Research Center, University of California, San Francisco, California 94143, USA.

出版信息

J Neurosci. 1998 Jan 1;18(1):147-55. doi: 10.1523/JNEUROSCI.18-01-00147.1998.

Abstract

The molecular changes responsible for inducing neuronal apoptosis are unknown. Rat cortical neurons were treated with x-irradiation 7 d after isolation to test for the role of DNA damage in neuronal death. The response of neurons to x-irradiation was compared with that of astrocytes that had been isolated 3 weeks earlier from newborn rats. At the time of irradiation, the neurons appeared well differentiated morphologically and were predominantly (90-95%) noncycling, based on flow cytometric analysis. There was a similar, linear increase in DNA double-strand breaks with increasing radiation dose in neurons and astrocytes. However, whereas doses as low as 2 Gy induced typical apoptotic changes in neurons, including nuclear fragmentation and/or internucleosomal DNA fragmentation, doses as high as 32 Gy caused little or no apoptosis in astrocytes. Radiation-induced apoptosis of neurons started 4-8 hr after irradiation, was maximal at 12 hr, and was dependent on dose up to 16 Gy. It was prevented when cycloheximide, a protein synthesis inhibitor, was added up to 6 hr after irradiation. In addition to their distinct apoptotic response, neurons rejoined radiation-induced DNA double-strand breaks more slowly than astrocytes. Treatment with benzamide to inhibit ADP-ribosylation and strand break repair increased apoptosis; splitting the dose of radiation to allow increased time for DNA repair decreased apoptosis. These data suggest that DNA damage may induce neuronal apoptosis, that the extent of damage may determine the degree of apoptosis induced, and that slow repair of damage may play a role in the susceptibility of neurons to apoptosis.

摘要

导致神经元凋亡的分子变化尚不清楚。将大鼠皮质神经元在分离7天后进行X射线照射,以测试DNA损伤在神经元死亡中的作用。将神经元对X射线照射的反应与3周前从新生大鼠分离的星形胶质细胞的反应进行比较。在照射时,根据流式细胞术分析,神经元在形态上表现出良好的分化,并且主要(90-95%)处于非循环状态。在神经元和星形胶质细胞中,随着辐射剂量的增加,DNA双链断裂呈相似的线性增加。然而,低至2 Gy的剂量可诱导神经元出现典型的凋亡变化,包括核碎裂和/或核小体间DNA断裂,而高达32 Gy的剂量在星形胶质细胞中几乎不引起或不引起凋亡。辐射诱导的神经元凋亡在照射后4-8小时开始,在12小时时达到最大值,并且在高达16 Gy的剂量范围内依赖于剂量。当在照射后6小时内加入蛋白质合成抑制剂环己酰亚胺时,凋亡被阻止。除了它们不同的凋亡反应外,神经元修复辐射诱导的DNA双链断裂的速度比星形胶质细胞慢。用苯甲酰胺处理以抑制ADP-核糖基化和链断裂修复会增加凋亡;分割辐射剂量以增加DNA修复时间会减少凋亡。这些数据表明,DNA损伤可能诱导神经元凋亡,损伤程度可能决定诱导的凋亡程度,并且损伤的缓慢修复可能在神经元对凋亡的易感性中起作用。

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