Sak A, Stuschke M
Department of Radiotherapy, University of Essen, Germany.
Int J Radiat Biol. 1998 Jan;73(1):35-43. doi: 10.1080/095530098142680.
The aim of this study was to determine the repair of radiation-induced DNA double-strand breaks (dsb) in actively transcribed regions and in the overall genome.
Pulsed-field gel electrophoresis was performed on Sfi I restriction enzyme digested DNA, labelled with a c-myc probe and on non-specifically 14C-labelled DNA of the adenocarcinoma cell line COLO320HSR after 400 Gy irradiation with 7 MeV electrons and repair incubation.
At the 130 kbp c-myc locus 68 +/- 5% of all dsb induced at a dose of 400 Gy were repaired by a fast mechanism with a repair half time of 9.4 +/- 3.2 min in comparison to the overall genome where all dsb induced at 400 Gy were repaired with a half time of 86 +/- 23 min. The fraction of residual dsb was about 30% higher in the c-myc locus than in the overall genome.
This study demonstrates intragenomic heterogeneity in half times of dsb repair with faster repair at the c-myc locus. In addition, differences in the residual dsb were found to represent region specific heterogeneity in residual damage or to possibly be attributed to the different assays used. The approach with gene probing can distinguish between correct and incorrect rejoining of dsb within the resolution of the experiments (< or = 20 kbp), in contrast to the assay at the overall genome.
本研究旨在确定活性转录区域和整个基因组中辐射诱导的DNA双链断裂(dsb)的修复情况。
用7 MeV电子对腺癌细胞系COLO320HSR进行400 Gy照射并进行修复孵育后,对经Sfi I限制性内切酶消化并用c-myc探针标记的DNA以及非特异性14C标记的DNA进行脉冲场凝胶电泳。
在130 kbp的c-myc基因座处,400 Gy剂量诱导的所有dsb中有68±5%通过快速机制修复,修复半衰期为9.4±3.2分钟,而在整个基因组中,400 Gy诱导的所有dsb修复半衰期为86±23分钟。c-myc基因座处残留dsb的比例比整个基因组高约30%。
本研究表明dsb修复半衰期存在基因组内异质性,c-myc基因座处修复更快。此外,发现残留dsb的差异代表残留损伤的区域特异性异质性,或者可能归因于所使用的不同检测方法。与整个基因组的检测方法相比,基因探测方法可以在实验分辨率(≤20 kbp)内区分dsb的正确和错误重新连接。