Somoza A, Dupasquier A, Chesta M A, Brunetto M, Mainardi R T
IFIMAT, Universidad Nacional del Centro de la Provincia de Buenos Aires, Tandil, Argentina.
Radiat Res. 1998 Mar;149(3):219-23.
The measurement of the mean lifetime of the positron (tau) in a lithium fluoride (LiF) chip which had been irradiated with up to 40 Gy from a 60Co gamma-ray source demonstrates a correlation between the positron mean lifetime and the dose which has been delivered to the crystal. This result points out the possibility of performing the readout of gamma-irradiated LiF thermoluminescent dosimeters by positron lifetime spectroscopy without changing the information stored in the chip significantly.
对用来自60Coγ射线源高达40戈瑞剂量辐照的氟化锂（LiF）芯片中 positron（正电子）的平均寿命（τ）进行测量，结果表明正电子平均寿命与传递给晶体的剂量之间存在相关性。这一结果指出了通过正电子寿命谱对γ辐照的LiF热释光剂量计进行读数的可能性，而不会显著改变存储在芯片中的信息。
