Carter L L, Zhang X, Dubey C, Rogers P, Tsui L, Swain S L
University of California at San Diego, USA.
J Immunother. 1998 May;21(3):181-7. doi: 10.1097/00002371-199805000-00003.
To gain insights into the development and regulation of immune responses, we have studied the phenotype, cytokine profiles, activation requirements, and susceptibility to apoptosis of naive CD4, Th1, Th2 polarized effectors, resting memory, and memory effector cells. T cell receptor (TCR) transgenic mice were utilized as a source of enriched naive cells that could be used to generate effector and memory populations. The direct comparison of these populations, which all bear the same TCR, has revealed some interesting distinctions. When restimulated with antigen, effector populations secrete high titers of cytokines in polarized patterns. Retaining their polarized profile, memory cells secrete low levels and memory effector cells secrete very large levels of cytokine. Unlike naive CD4 T cells, effector cell proliferation is not dependent on classic co-stimulation but does require a threshold level of TCR signaling that can be enhanced by accessory interactions. Memory cells have intermediate requirements for co-stimulation/accessory interactions. However, different thresholds of activation are required for production of various cytokines, with requirements for production of interleukin (IL) 2 >> interferon-gamma > IL-4. CD4 subsets also differ dramatically in their susceptibility to apoptosis. Naive Th2 effectors and resting memory cells undergo activation-induced cell death (AICD) 4-7 days after antigen stimulation. In contrast, both primary and memory Th1 effectors undergo rapid AICD mediated by Fas/FasL within 0.5-2 days after stimulation. AICD is substantially blocked by IL-2 and transforming growth factor-beta1, resulting in impressive effector expansion. The process of memory development from effector populations remains mysterious, but these studies suggest roles for cytokines in promoting survival.
为深入了解免疫反应的发生发展及调控机制,我们研究了初始CD4细胞、Th1和Th2极化效应细胞、静息记忆细胞以及记忆效应细胞的表型、细胞因子谱、激活需求和凋亡易感性。利用T细胞受体(TCR)转基因小鼠作为富集初始细胞的来源,这些细胞可用于产生效应细胞群和记忆细胞群。对所有携带相同TCR的这些细胞群进行直接比较,揭示了一些有趣的差异。当用抗原再次刺激时,效应细胞群以极化模式分泌高滴度的细胞因子。记忆细胞保持其极化特征,分泌低水平的细胞因子,而记忆效应细胞则分泌非常高水平的细胞因子。与初始CD4 T细胞不同,效应细胞的增殖不依赖于经典的共刺激,但确实需要一定阈值水平的TCR信号,该信号可通过辅助相互作用增强。记忆细胞对共刺激/辅助相互作用有中等需求。然而,产生各种细胞因子需要不同的激活阈值,产生白细胞介素(IL)-2的需求>>干扰素-γ>IL-4。CD4亚群在凋亡易感性方面也有显著差异。初始Th2效应细胞和静息记忆细胞在抗原刺激后4 - 7天经历激活诱导的细胞死亡(AICD)。相比之下,初级和记忆Th1效应细胞在刺激后0.5 - 2天内通过Fas/FasL介导快速发生AICD。IL-2和转化生长因子-β1可显著阻断AICD,从而导致效应细胞显著扩增。从效应细胞群发展为记忆细胞的过程仍然神秘,但这些研究表明细胞因子在促进存活中发挥作用。