Marten I, Hoshi T
Department of Physiology and Biophysics, College of Medicine, The University of Iowa, Iowa City 52242, USA.
Biophys J. 1998 Jun;74(6):2953-62. doi: 10.1016/S0006-3495(98)78002-6.
Functional roles of different domains (pore region, S4 segment, N-terminus) of the KAT1 potassium channel in its voltage-dependent gating were electrophysiologically studied in Xenopus oocytes. The KAT1 properties did not depend on the extracellular K+ concentration or on residue H267, equivalent to one of the residues known to be important in C-type inactivation in Shaker channels, indicating that the hyperpolarization-induced KAT1 inward currents are related to the channel activation rather than to recovery from inactivation. Neutralization of a positively charged amino acid in the S4 domain (R176S) reduced the gating charge movement, suggesting that it acts as a voltage-sensing residue in KAT1. N-terminal deletions alone (e.g., delta20-34) did not affect the gating charge movement. However, the deletions paradoxically increased the voltage sensitivity of the R176S mutant channel, but not that of the wild-type channel. We propose a simple model in which the N-terminus determines the KAT1 voltage sensitivity by contributing to the electric field sensed by the voltage sensor.
在非洲爪蟾卵母细胞中,通过电生理学方法研究了KAT1钾通道不同结构域(孔区、S4片段、N端)在其电压依赖性门控中的功能作用。KAT1的特性不依赖于细胞外K+浓度或残基H267,H267等同于已知在Shaker通道C型失活中起重要作用的残基之一,这表明超极化诱导的KAT1内向电流与通道激活有关,而非与从失活状态恢复有关。S4结构域中一个带正电荷的氨基酸(R176S)的中和减少了门控电荷移动,表明它在KAT1中充当电压感应残基。单独的N端缺失(例如,delta20 - 34)不影响门控电荷移动。然而,这些缺失反常地增加了R176S突变体通道的电压敏感性,但未增加野生型通道的电压敏感性。我们提出了一个简单模型,其中N端通过对电压传感器感知的电场做出贡献来决定KAT1的电压敏感性。