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电刺激人蜗神经核诱发听觉脑干反应的不应期特性:神经发生器的证据

Refractory properties of auditory brain-stem responses evoked by electrical stimulation of human cochlear nucleus: evidence of neural generators.

作者信息

Waring M D

机构信息

Electrophysiology Laboratory, House Ear Institute, Los Angeles, CA 90057, USA.

出版信息

Electroencephalogr Clin Neurophysiol. 1998 Jul;108(4):331-44. doi: 10.1016/s0168-5597(97)00072-5.

Abstract

In this study of electrically-evoked auditory brain-stem responses (EABRs) elicited by cochlear nucleus stimulation, 3 waves were identified after the initial wave that is directly initiated by the electric stimulus. Varying the rate of periodic stimulation or the interval between pairs of stimuli revealed that the shorter the latency of a wave, the faster it recovered from activation (i.e. shorter refractory period). The slow recovery of the third wave and an accompanying contribution to the second wave could be accounted for by postsynaptic generation in the two medial superior olivary nuclei (MSO); the faster recovery of another contribution to the second wave by generation in an axonal tract bending around the contralateral MSO; and the fastest recovery of the first wave by another axonal pathway having larger axons. Comparison with the relative latencies and spatial distribution of an acoustically-evoked auditory brain-stem response (AABR) indicated that the third wave corresponds to wave V, the second to wave IV (called IVb), and the first to a wave that precedes wave IV (called IVa). The anatomical interpretations for the two later waves of the EABR are consistent with most of the extant data on the neural generators of AABR waves IV and V. Thus, the present data and analysis strengthen the identification of the electrically evoked responses as EABRs and provide a firmer foundation for intra-operative EABR monitoring to assist auditory brain-stem implant placement.

摘要

在这项关于耳蜗核刺激诱发的电诱发听觉脑干反应(EABR)的研究中,在由电刺激直接引发的初始波之后识别出了3个波。改变周期性刺激的速率或成对刺激之间的间隔显示,波的潜伏期越短,其从激活中恢复得越快(即不应期越短)。第三波的缓慢恢复以及对第二波的伴随贡献可以通过两个内侧上橄榄核(MSO)中的突触后产生来解释;第二波的另一个贡献通过在围绕对侧MSO弯曲的轴突束中产生而恢复得更快;第一波通过具有较大轴突的另一条轴突通路恢复得最快。与声诱发听觉脑干反应(AABR)的相对潜伏期和空间分布进行比较表明,第三波对应于V波,第二波对应于IV波(称为IVb),第一波对应于IV波之前的一个波(称为IVa)。对EABR后两个波的解剖学解释与关于AABR波IV和V的神经发生器的大多数现有数据一致。因此,目前的数据和分析加强了将电诱发反应识别为EABR的观点,并为术中EABR监测以辅助听觉脑干植入物放置提供了更坚实的基础。

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