用于平行板电离室的电子束和钴 -60 束中前表面壁因子的测量。

Measurement of Prepl Pwall factors in electron beams and in a 60Co beam for plane-parallel chambers.

作者信息

Ding G X, Cygler J E

机构信息

Fraser Valley Cancer Centre, British Columbia Cancer Agency, Surrey, Canada.

出版信息

Med Phys. 1998 Aug;25(8):1453-7. doi: 10.1118/1.598330.

DOI:10.1118/1.598330

PMID:9725133

Abstract

This paper describes a method to measure the product of Prepl Pwall correction factors for ionization chambers and presents our measured values of Prepl Pwall for Markus plane-parallel chambers in electron beams. It is shown that the measured values of Prepl Pwall can be fitted to an equation, Prepl Pwall = c1 + c2 R50 + c3 (R50)2, for Markus chambers at the new reference depth for electron beams (6 MeV < or = nominal energy E < or = 20 MeV). We also present our measured values of Prepl Pwall for NACP and Markus chambers in a water phantom irradiated in a 60Co beam.

摘要

本文描述了一种测量电离室Prepl Pwall校正因子乘积的方法，并给出了我们在电子束中对Markus平行板电离室测量的Prepl Pwall值。结果表明，对于电子束新参考深度（6 MeV≤标称能量E≤20 MeV）下的Markus电离室，测量得到的Prepl Pwall值可以拟合为方程Prepl Pwall = c1 + c2 R50 + c3 (R50)2。我们还给出了在60Co束照射的水模体中，NACP和Markus电离室的Prepl Pwall测量值。