Tanaka M, Furuya K, Saito T
High Resolution Beam Research Station, National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
Microsc Microanal. 1998 May;4(3):207-217. doi: 10.1017/s1431927698980205.
: A focused ion beam (FIB) interface attached to a column of 200 keV transmission electron microscope (TEM) was developed for in situ micropatterning to semiconductors. TEM specimens of Si and GaAs, and those of a thin Ni2Si layer on a Si substrate were micromilled in the TEM during observation. A set of 6 x 6-µm squares and alphabet letters were patterned with a 25 keV Ga+-FIB of 0.2-µm beam diameter at room temperature. The effect of FIB irradiation on the structural evolution was observed simultaneously by a TV-rate video camera and sequentially by regular film. FIB micropatterning to semiconductor specimens caused amorphization and Ga injection. The excess Ga in the specimens precipitated as metastable solid gamma-phase for Si and as liquid phase for GaAs. Ni2Si/Si specimens lost silicide crystallinity after FIB patterning. Annealing of these bilayer specimens at 673K resulted in the precipitation of Ni-rich silicide.
