Uzuhashi Jun, Ohkubo Tadakatsu
National Institute for Materials Science, Tsukuba, 305-0047, Japan.
National Institute for Materials Science, Tsukuba, 305-0047, Japan.
Ultramicroscopy. 2024 Aug;262:113980. doi: 10.1016/j.ultramic.2024.113980. Epub 2024 Apr 26.
Nowadays, a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been widely used to prepare the thin-foil sample for transmission electron microscopy (TEM) or scanning TEM (STEM) observation. An establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM analysis. In this work, the FIB damages introduced by Ga beam were investigated both experimentally and stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. It has been revealed that experimental investigations of the FIB-induced damage are in good agreement with SRIM simulation by defining the damage as not only "amorphization" but also "crystal distortion". The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.
如今，配备扫描电子显微镜（SEM）系统的聚焦镓离子束（FIB）已被广泛用于制备用于透射电子显微镜（TEM）或扫描透射电子显微镜（STEM）观察的薄箔样品。建立一个可重复的高质量样品制备过程的可靠策略对于进行高质量的（S）TEM分析至关重要。在这项工作中，通过实验研究了镓束引入的FIB损伤，并对硅（Si）、氮化镓（GaN）、磷化铟（InP）和砷化镓（GaAs）半导体进行了物质中离子的阻止和射程（SRIM）模拟。结果表明，通过将损伤定义为不仅是“非晶化”，还包括“晶体畸变”，对FIB诱导损伤的实验研究与SRIM模拟结果吻合良好。本文所示的对FIB损伤的系统评估对于可靠的（S）TEM样品制备应是不可或缺的指导。
