孤束核味觉核团中GABAA双相突触电位的离子机制

Ionic mechanism of GABAA biphasic synaptic potentials in gustatory nucleus of the solitary tract.

作者信息

Grabauskas G, Bradley R M

机构信息

Department of Biologic and Materials Sciences, School of Dentistry, University of Michigan, Ann Arbor 48109-1078, USA.

出版信息

Ann N Y Acad Sci. 1998 Nov 30;855:486-7. doi: 10.1111/j.1749-6632.1998.tb10610.x.

DOI:10.1111/j.1749-6632.1998.tb10610.x

PMID:9929643

Abstract

Gamma-aminobutyric acid (GABA) is the principal neurotransmitter of synaptic inhibition in the gustatory nucleus of the solitary tract (rNST). High-frequency activation of GABA neurons in the rNST results in biphasic inhibitory postsynaptic potentials (IPSPs) that are initially hyperpolarizing but then became depolarizing. Our results indicate that high-frequency stimulation evokes redistribution of Cl- and K+ ions that shifts IPSP reversal potential in a more positive direction, which produces a biphasic or depolarizing IPSP.

摘要

γ-氨基丁酸（GABA）是孤束味觉核（rNST）中突触抑制的主要神经递质。rNST中GABA神经元的高频激活会导致双相抑制性突触后电位（IPSPs），最初是超极化的，但随后变为去极化。我们的结果表明，高频刺激会引起Cl-和K+离子的重新分布，使IPSP反转电位向更正的方向移动，从而产生双相或去极化的IPSP。