Magnetoresistance in a GaAs-AlxGa1-xAs heterostructure with double subband occupancy.
作者信息
Williamson JG, Broekaart ME, Foxon CT, Harris JJ
出版信息
Phys Rev B Condens Matter. 1988 Feb 15;37(5):2756-2758. doi: 10.1103/physrevb.37.2756.
PMID:9944845
Abstract
摘要
相似文献
1
Magnetoresistance in a GaAs-AlxGa1-xAs heterostructure with double subband occupancy.
Phys Rev B Condens Matter. 1988 Feb 15;37(5):2756-2758. doi: 10.1103/physrevb.37.2756.
2
Determination of subband structure, depolarization shift, and depletion charge in an AlxGa1-xAs-GaAs heterostructure.
Phys Rev B Condens Matter. 1989 May 15;39(15):10879-10886. doi: 10.1103/physrevb.39.10879.
3
Transition from one- to two-subband occupancy in the 2DEG of back-gated modulation-doped GaAs-AlxGa1-xAs heterostructures.背栅调制掺杂的GaAs-AlxGa1-xAs异质结构二维电子气中从一个子带到两个子带占据的转变。
Phys Rev B Condens Matter. 1995 Jun 15;51(24):17600-17604. doi: 10.1103/physrevb.51.17600.
4
Subband-Landau-level spectroscopy in GaAs-AlxGa1-xAs heterojunctions.GaAs - AlxGa1 - xAs异质结中的子带 - 朗道能级光谱学。
Phys Rev B Condens Matter. 1986 Oct 15;34(8):5590-5597. doi: 10.1103/physrevb.34.5590.
5
Exciton binding energy and subband structures of GaAs/AlxGa1-xAs superlattices.GaAs/AlxGa1-xAs超晶格的激子结合能和子带结构
Phys Rev B Condens Matter. 1991 Jun 15;43(18):14504-14512. doi: 10.1103/physrevb.43.14504.
6
Subband structures of GaAs/AlxGa1-xAs multiple quantum wells.砷化镓/铝镓砷多量子阱的子带结构
Phys Rev B Condens Matter. 1989 Oct 15;40(12):8349-8356. doi: 10.1103/physrevb.40.8349.
7
Excitons associated with subband dispersion in GaAs/AlxGa1-xAs superlattices.与 GaAs/AlxGa1-xAs 超晶格中亚带色散相关的激子。
Phys Rev B Condens Matter. 1989 Mar 15;39(8):5562-5565. doi: 10.1103/physrevb.39.5562.
8
Population process of the upper subband in AlxGa1-xAs-GaAs quantum wells.AlxGa1-xAs-GaAs量子阱中上层子带的粒子数过程
Phys Rev B Condens Matter. 1989 Jun 15;39(17):12993-12996. doi: 10.1103/physrevb.39.12993.
9
Zone folding and subband dispersions in GaAs-AlxGa1-xAs(001) superlattices.GaAs - AlxGa1 - xAs(001)超晶格中的区折叠和子带色散
Phys Rev B Condens Matter. 1987 Jun 15;35(18):9591-9604. doi: 10.1103/physrevb.35.9591.
10
Hole subband states of GaAs/AlxGa1-xAs quantum wells within the 6 x 6 Luttinger model.6×6 卢廷格模型中 GaAs/AlxGa1-xAs 量子阱的空穴子带态
Phys Rev B Condens Matter. 1994 Sep 15;50(12):8493-8501. doi: 10.1103/physrevb.50.8493.
Zotero 插件