短周期砷化镓-砷化铝超晶格：光学性质与电子结构 - Suppr | 超能文献

Short-period GaAs-AlAs superlattices: Optical properties and electronic structure.

作者信息

Moore KJ, Duggan G, Dawson P, Foxon CT

出版信息

Phys Rev B Condens Matter. 1988 Sep 15;38(8):5535-5542. doi: 10.1103/physrevb.38.5535.

DOI:10.1103/physrevb.38.5535

Abstract

摘要

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

相似文献

1

Short-period GaAs-AlAs superlattices: Optical properties and electronic structure.短周期砷化镓-砷化铝超晶格：光学性质与电子结构

Phys Rev B Condens Matter. 1988 Sep 15;38(8):5535-5542. doi: 10.1103/physrevb.38.5535.

2

A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)(AlAs) (m, n ≤ 10) Superlattices Based on Density Functional Theory Calculations.基于密度泛函理论计算的短周期（GaAs）（AlAs）（m，n≤10）超晶格电子结构和物理性质的高通量研究

Nanomaterials (Basel). 2018 Sep 10;8(9):709. doi: 10.3390/nano8090709.

3

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study.堆叠周期对GaAs/AlAs超晶格电子和光学性质的影响：第一性原理研究

Sci Rep. 2020 Mar 17;10(1):4862. doi: 10.1038/s41598-020-61509-x.

4

Effects of growth conditions on the GaAs/AlAs superlattices by grazing incidence X-ray reflectivity.掠入射X射线反射率研究生长条件对GaAs/AlAs超晶格的影响

J Nanosci Nanotechnol. 2013 Feb;13(2):761-5. doi: 10.1166/jnn.2013.6090.

5

Electronic structures and optical properties of short-period GaAs/AlAs superlattices.短周期GaAs/AlAs超晶格的电子结构与光学性质

Phys Rev B Condens Matter. 1990 Jul 15;42(3):1781-1790. doi: 10.1103/physrevb.42.1781.

6

Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices.（GaAs）n/（AlAs）n超短周期超晶格中的层序排列与断层现象

Phys Rev Lett. 2003 Sep 5;91(10):106103. doi: 10.1103/PhysRevLett.91.106103.

7

Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates.通过在（001）倾斜砷化镓衬底上沉积砷化铝和砷化镓分数层所制备的砷化镓 - 砷化铝横向表面超晶格中的电子态。

Phys Rev B Condens Matter. 1992 Nov 15;46(19):12371-12376. doi: 10.1103/physrevb.46.12371.

8

Optical properties of ordered and randomly disordered AlAs/GaAs short-period superlattices.

Phys Rev B Condens Matter. 1994 Apr 15;49(16):11173-11184. doi: 10.1103/physrevb.49.11173.

9

Effects of wave-function delocalization on the optical properties of GaAs/AlAs short-period asymmetric superlattices.

Phys Rev B Condens Matter. 1990 Apr 15;41(11):7647-7652. doi: 10.1103/physrevb.41.7647.

10

Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices.

Phys Rev B Condens Matter. 1987 Apr 15;35(12):6207-6212. doi: 10.1103/physrevb.35.6207.

引用本文的文献

1

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study.堆叠周期对GaAs/AlAs超晶格电子和光学性质的影响：第一性原理研究

Sci Rep. 2020 Mar 17;10(1):4862. doi: 10.1038/s41598-020-61509-x.

2

Role of hole confinement in the recombination properties of InGaN quantum structures.空穴限制在InGaN量子结构复合特性中的作用。

Sci Rep. 2019 Jun 21;9(1):9047. doi: 10.1038/s41598-019-45218-8.