通过扫描隧道显微镜研究砷化镓（110）表面锑的几何结构和电子结构。 - Suppr

Suppr

超能文献

Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy.

作者信息

Mårtensson P, Feenstra RM

出版信息

Phys Rev B Condens Matter. 1989 Apr 15;39(11):7744-7753. doi: 10.1103/physrevb.39.7744.

DOI:10.1103/physrevb.39.7744

PMID:9947455

Abstract

摘要

相似文献

Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy.

Phys Rev B Condens Matter. 1989 Apr 15;39(11):7744-7753. doi: 10.1103/physrevb.39.7744.

Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy.

Science. 1991 Apr 26;252(5005):547-8. doi: 10.1126/science.252.5005.547.

Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopy.

Phys Rev Lett. 1989 Sep 25;63(13):1412-1415. doi: 10.1103/PhysRevLett.63.1412.

Quantum States and atomic structure of silicon surfaces.

Science. 1986 Oct 17;234(4774):304-9. doi: 10.1126/science.234.4774.304.

Atomic and electronic structure of Bi/GaAs(001)-α2(2 × 4).

J Phys Condens Matter. 2008 Jul 2;20(26):265003. doi: 10.1088/0953-8984/20/26/265003. Epub 2008 May 22.

Atomic Structure of the Stoichiometric GaAs(114) Surface.

Phys Rev Lett. 2001 Jan 1;86(1):115-118. doi: 10.1103/PhysRevLett.86.115.

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface.

Sci Rep. 2018 Jan 19;8(1):1220. doi: 10.1038/s41598-018-19560-2.

Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning-tunneling microscopy.

Phys Rev B Condens Matter. 1987 Nov 15;36(14):7718-7721. doi: 10.1103/physrevb.36.7718.

Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum.

J Chem Phys. 2013 Dec 28;139(24):244706. doi: 10.1063/1.4852155.

Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

Nanoscale. 2016 Jun 16;8(24):12118-22. doi: 10.1039/c6nr02190e.

引用本文的文献

High dynamic range scanning tunneling microscopy.

MethodsX. 2024 Jul 10;13:102857. doi: 10.1016/j.mex.2024.102857. eCollection 2024 Dec.

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

Nat Commun. 2017 Mar 7;8:14721. doi: 10.1038/ncomms14721.

文献AI研究员

20分钟写一篇综述，助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型，支持多种主流文档格式。

立即体验

相似文献

Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy.

Phys Rev B Condens Matter. 1989 Apr 15;39(11):7744-7753. doi: 10.1103/physrevb.39.7744.

Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy.

Science. 1991 Apr 26;252(5005):547-8. doi: 10.1126/science.252.5005.547.

Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopy.

Phys Rev Lett. 1989 Sep 25;63(13):1412-1415. doi: 10.1103/PhysRevLett.63.1412.

Quantum States and atomic structure of silicon surfaces.

Science. 1986 Oct 17;234(4774):304-9. doi: 10.1126/science.234.4774.304.

Atomic and electronic structure of Bi/GaAs(001)-α2(2 × 4).

J Phys Condens Matter. 2008 Jul 2;20(26):265003. doi: 10.1088/0953-8984/20/26/265003. Epub 2008 May 22.

Atomic Structure of the Stoichiometric GaAs(114) Surface.

Phys Rev Lett. 2001 Jan 1;86(1):115-118. doi: 10.1103/PhysRevLett.86.115.

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface.

Sci Rep. 2018 Jan 19;8(1):1220. doi: 10.1038/s41598-018-19560-2.

Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning-tunneling microscopy.

Phys Rev B Condens Matter. 1987 Nov 15;36(14):7718-7721. doi: 10.1103/physrevb.36.7718.

Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum.

J Chem Phys. 2013 Dec 28;139(24):244706. doi: 10.1063/1.4852155.

Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

Nanoscale. 2016 Jun 16;8(24):12118-22. doi: 10.1039/c6nr02190e.

引用本文的文献

High dynamic range scanning tunneling microscopy.

MethodsX. 2024 Jul 10;13:102857. doi: 10.1016/j.mex.2024.102857. eCollection 2024 Dec.

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

Nat Commun. 2017 Mar 7;8:14721. doi: 10.1038/ncomms14721.