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5-卤代尿嘧啶薄膜中卤素阴离子的形成:X射线与亚电离电子的比较

Halogen anion formation in 5-halouracil films: X rays compared to subionization electrons.

作者信息

Klyachko D V, Huels M A, Sanche L

机构信息

Département de Médecine Nucléaire et de Radiobiologie, Université de Sherbrooke, Québec, Canada.

出版信息

Radiat Res. 1999 Feb;151(2):177-87.

PMID:9952302
Abstract

The radiosensitization properties of 5-halouracils (5-FU, 5-BrU and 5-IU), i.e. the enhanced sensitivity of biological media containing these compounds to ionizing radiation, have been studied using surface science methods. We show that soft X rays and near 0 eV electrons both induce dissociation of 5-halouracils into a halogen anion and a uracilyl radical. The yield of anions from 5-FU is much smaller than that from the bromo- and iodo-analogs. We explain the high anion yields in 5-BrU and 5-IU with dissociative electron attachment (DEA) of near 0 eV electrons. The thermodynamic threshold for DEA to 5-FU is near 2 eV and therefore prohibits dissociation by near 0 eV electrons.

摘要

5-卤代尿嘧啶(5-氟尿嘧啶、5-溴尿嘧啶和5-碘尿嘧啶)的放射增敏特性,即含有这些化合物的生物介质对电离辐射的敏感性增强,已通过表面科学方法进行了研究。我们表明,软X射线和近0 eV电子都会诱导5-卤代尿嘧啶分解为卤素阴离子和尿嘧啶基自由基。5-氟尿嘧啶产生阴离子的产率远低于溴代和碘代类似物。我们用近0 eV电子的解离电子附着(DEA)来解释5-溴尿嘧啶和5-碘尿嘧啶中高阴离子产率的原因。5-氟尿嘧啶发生DEA的热力学阈值接近2 eV,因此禁止近0 eV电子引起的解离。

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