直接带隙III-V族半导体（110）表面的隧穿光谱学。 - Suppr

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

作者信息

Feenstra RM

出版信息

Phys Rev B Condens Matter. 1994 Aug 15;50(7):4561-4570. doi: 10.1103/physrevb.50.4561.

DOI:10.1103/physrevb.50.4561

PMID:9976760

Abstract

摘要

相似文献

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

Phys Rev B Condens Matter. 1994 Aug 15;50(7):4561-4570. doi: 10.1103/physrevb.50.4561.

Spin-induced forbidden evanescent states in III-V semiconductors.

Phys Rev Lett. 2005 Oct 28;95(18):186406. doi: 10.1103/PhysRevLett.95.186406.

Edge-state-dependent tunneling of dipole-exchange spin waves in submicrometer magnetic strips with an air gap.

Nanotechnology. 2012 Dec 14;23(49):495202. doi: 10.1088/0957-4484/23/49/495202. Epub 2012 Nov 19.

Fowler-Nordheim tunneling induced charge transfer plasmons between nearly touching nanoparticles.

ACS Nano. 2013 Jan 22;7(1):707-16. doi: 10.1021/nn304970v. Epub 2012 Dec 12.

Direct observation of lanthanide(III)-phthalocyanine molecules on Au(111) by using scanning tunneling microscopy and scanning tunneling spectroscopy and thin-film field-effect transistor properties of Tb(III)- and Dy(III)-phthalocyanine molecules.

J Am Chem Soc. 2009 Jul 29;131(29):9967-76. doi: 10.1021/ja902349t.

Thermionic emission and tunneling at carbon nanotube-organic semiconductor interface.

ACS Nano. 2012 Jun 26;6(6):4993-9. doi: 10.1021/nn300544v. Epub 2012 May 15.

Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

ACS Nano. 2015 Jan 27;9(1):725-32. doi: 10.1021/nn5061805. Epub 2014 Dec 22.

Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors.

Phys Rev Lett. 1996 Sep 30;77(14):2997-3000. doi: 10.1103/PhysRevLett.77.2997.

Electronic structures of size-selected single-layered platinum clusters on silicon(111)-7x7 surface at a single cluster level by tunneling spectroscopy.

J Chem Phys. 2006 Jan 7;124(1):14701. doi: 10.1063/1.2126669.

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Top Curr Chem. 2012;312:275-302. doi: 10.1007/128_2011_223.

引用本文的文献

Evidence of ferroelectricity in an antiferromagnetic vanadium trichloride monolayer.

Sci Adv. 2025 Mar 7;11(10):eado6538. doi: 10.1126/sciadv.ado6538. Epub 2025 Mar 5.

Stabilization of highly efficient perovskite solar cells with a tailored supramolecular interface.

Nat Commun. 2024 Aug 20;15(1):7139. doi: 10.1038/s41467-024-51550-z.

High dynamic range scanning tunneling microscopy.

MethodsX. 2024 Jul 10;13:102857. doi: 10.1016/j.mex.2024.102857. eCollection 2024 Dec.

Implementation of the Su-Schrieffer-Heeger Model in the Self-Assembly Si-In Atomic Chains on the Si(553)-Au Surface.

ACS Nano. 2024 May 21;18(20):12861-12869. doi: 10.1021/acsnano.4c00225. Epub 2024 May 7.

Variation in the Bandgap of Amorphous Zinc Tin Oxide: Investigating the Thickness Dependence STS.

ACS Omega. 2024 Jan 31;9(6):7262-7268. doi: 10.1021/acsomega.3c09958. eCollection 2024 Feb 13.

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111).

ACS Nano. 2023 Mar 14;17(5):5047-5058. doi: 10.1021/acsnano.2c12863. Epub 2023 Feb 23.

A self-consistent model to link surface electronic band structure to the voltage dependence of hot electron induced molecular nanoprobe experiments.

Nanoscale Adv. 2022 Oct 17;4(22):4880-4885. doi: 10.1039/d2na00644h. eCollection 2022 Nov 8.

Influence of Doping on the Topological Surface States of Crystalline BiSe Topological Insulators.

Materials (Basel). 2022 Mar 11;15(6):2083. doi: 10.3390/ma15062083.

Imaging antiferromagnetic domain fluctuations and the effect of atomic scale disorder in a doped spin-orbit Mott insulator.

Sci Adv. 2021 Nov 12;7(46):eabi6468. doi: 10.1126/sciadv.abi6468. Epub 2021 Nov 10.

Nanoscale interfacial engineering enables highly stable and efficient perovskite photovoltaics.

Energy Environ Sci. 2021 Sep 16;14(10):5552-5562. doi: 10.1039/d1ee02454j. eCollection 2021 Oct 13.

文献AI研究员

20分钟写一篇综述，助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型，支持多种主流文档格式。

立即体验

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

作者信息

出版信息

相似文献

引用本文的文献

文献AI研究员

用中文搜PubMed

文档翻译

Suppr 超能文献

相似文献

引用本文的文献