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Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces.

作者信息

Arent DJ

出版信息

Phys Rev B Condens Matter. 1990 May 15;41(14):9843-9849. doi: 10.1103/physrevb.41.9843.

DOI:10.1103/physrevb.41.9843
PMID:9993364
Abstract
摘要

相似文献

1
Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces.应变InxGa1-xAs/AlyGa1-yAs异质界面的能带偏移
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2
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