• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

Temperature dependence of the low-temperature mobility in ultrapure AlxGa1-xAs/GaAs heterojunctions: Acoustic-phonon scattering.

作者信息

Kawamura T

出版信息

Phys Rev B Condens Matter. 1990 Aug 15;42(6):3725-3728. doi: 10.1103/physrevb.42.3725.

DOI:10.1103/physrevb.42.3725
PMID:9995887
Abstract
摘要

相似文献

1
Temperature dependence of the low-temperature mobility in ultrapure AlxGa1-xAs/GaAs heterojunctions: Acoustic-phonon scattering.超纯AlxGa1-xAs/GaAs异质结中低温迁移率的温度依赖性:声子散射
Phys Rev B Condens Matter. 1990 Aug 15;42(6):3725-3728. doi: 10.1103/physrevb.42.3725.
2
Phonon-scattering-limited electron mobilities in AlxGa1-xAs/GaAs heterojunctions.
Phys Rev B Condens Matter. 1992 Feb 15;45(7):3612-3627. doi: 10.1103/physrevb.45.3612.
3
Phonon-drag thermoelectric power in AlxGa1-xAs/GaAs heterojunctions at low temperatures.
Phys Rev B Condens Matter. 1990 Oct 15;42(11):7078-7083. doi: 10.1103/physrevb.42.7078.
4
Electron-phonon interactions in modulation-doped AlxGa1-xAs/GaAs heterojunctions.
Phys Rev B Condens Matter. 1989 Nov 15;40(14):9744-9750. doi: 10.1103/physrevb.40.9744.
5
Electronic and acoustic-phonon inter-Landau-level Raman scattering in GaAs/AlxGa1-xAs multiple quantum wells.GaAs/AlxGa1-xAs多量子阱中电子与声子间的朗道能级间拉曼散射
Phys Rev B Condens Matter. 1995 Mar 15;51(11):7064-7073. doi: 10.1103/physrevb.51.7064.
6
Temperature dependence of photoemission characteristics from AlGaAs/GaAs photocathodes.
Appl Opt. 2017 Jul 20;56(21):6015-6021. doi: 10.1364/AO.56.006015.
7
Temperature dependence of mobility in AlxGa1-xAs/GaAs heterostructures for impurity scattering.AlxGa1-xAs/GaAs异质结构中杂质散射迁移率的温度依赖性
Phys Rev B Condens Matter. 1990 Apr 15;41(12):8537-8540. doi: 10.1103/physrevb.41.8537.
8
Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells.
Phys Rev B Condens Matter. 1995 Jul 15;52(3):1874-1881. doi: 10.1103/physrevb.52.1874.
9
Low-temperature energy relaxation in AlxGa1-xAs/GaAs heterojunctions.AlxGa1-xAs/GaAs异质结中的低温能量弛豫。
Phys Rev B Condens Matter. 1990 Sep 15;42(8):5407-5410. doi: 10.1103/physrevb.42.5407.
10
Resonant tunneling through one- and zero-dimensional states constricted by AlxGa1-xAs/GaAs/AlxGa1-xAs heterojunctions and high-resistance regions induced by focused Ga ion-beam implanation.
Phys Rev B Condens Matter. 1990 Mar 15;41(8):5459-5462. doi: 10.1103/physrevb.41.5459.

引用本文的文献

1
Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses.声子对确定性量子点微透镜中单个激子退相的影响。
ACS Photonics. 2016 Dec 21;3(12):2461-2466. doi: 10.1021/acsphotonics.6b00707. Epub 2016 Nov 8.
2
Screening and transport in 2D semiconductor systems at low temperatures.二维半导体系统在低温下的筛选与输运
Sci Rep. 2015 Nov 17;5:16655. doi: 10.1038/srep16655.