Pseudopotential calculations of the valence-band offsets at the ZnSe/Ge, ZnSe/GaAs, and GaAs/Ge (110) interfaces: Effects of the Ga and Zn 3d electrons.
作者信息
Qteish A, Needs RJ
出版信息
Phys Rev B Condens Matter. 1991 Feb 15;43(5):4229-4235. doi: 10.1103/physrevb.43.4229.
PMID:9997773
Abstract
摘要
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