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辐射质量对溶液中照射的SV40 DNA中DNA链断裂产率的影响。

Influence of radiation quality on the yield of DNA strand breaks in SV40 DNA irradiated in solution.

作者信息

Taucher-Scholz G, Kraft G

机构信息

Gesellschaft für Schwerionenforschung, Darmstadt, Germany.

出版信息

Radiat Res. 1999 May;151(5):595-604.

PMID:10319733
Abstract

Using highly energetic particles to irradiate plasmid DNA in aerobic aqueous solution, we have compiled an extensive database on how yields of DNA single- and double-strand breaks (SSBs and DSBs) vary with radiation quality. This study was performed in a low-scavenging buffer system and covers a wide range of ion species (helium to uranium) and LETs (5 to 16,000 keV/microm). For LETs up to around 40 keV/microm for SSBs and 400 keV/microm for DSBs, the total energy deposition determines cross section. At higher LET, cross sections level off and individual plateaus for particles of different atomic numbers are observed. For each ion species this is more pronounced and occurs at lower LET for SSBs than for DSBs, leading to an increase in the DSB:SSB ratio from 1:70 for X rays to 1:6 at 500 keV/microm. At this LET, the influence of track structure becomes evident, with high local concentrations of ionization events favoring the formation of DSBs and also intratrack recombination reactions. For lower-energy ions, a saturation in production of measurable DSBs is apparent, due to correlated lesion induction within densely ionizing particle tracks. For very heavy low-energy ions, both SSB and DSB cross sections decrease with particle velocity at nearly constant LET, forming individual hooked curves when plotted as a function of LET.

摘要

我们使用高能粒子辐照有氧水溶液中的质粒DNA,建立了一个关于DNA单链断裂和双链断裂(SSB和DSB)产率如何随辐射质量变化的广泛数据库。本研究在低清除缓冲系统中进行,涵盖了广泛的离子种类(从氦到铀)和传能线密度(LET,5至16000 keV/μm)。对于SSB,LET高达约40 keV/μm,对于DSB,LET高达约400 keV/μm时,总能量沉积决定截面。在更高的LET下,截面趋于平稳,并观察到不同原子序数粒子的各自平台。对于每种离子种类,这种情况更为明显,且SSB比DSB在更低的LET时出现,导致DSB:SSB比值从X射线的1:70增加到500 keV/μm时的1:6。在此LET下,径迹结构的影响变得明显,高局部电离事件浓度有利于DSB的形成以及径迹内重组反应。对于较低能量的离子,由于在密集电离粒子径迹内相关损伤的诱导,可测量DSB的产生出现饱和。对于非常重的低能量离子,SSB和DSB截面在LET几乎恒定的情况下随粒子速度降低,当作为LET的函数绘制时形成各自的钩状曲线。

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