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电压门控钾通道单个表面电荷的作用。

Role of individual surface charges of voltage-gated K channels.

作者信息

Elinder F, Arhem P

机构信息

The Nobel Institute for Neurophysiology, Department of Neuroscience, Karolinska Institutet, S-171 77 Stockholm, Sweden.

出版信息

Biophys J. 1999 Sep;77(3):1358-62. doi: 10.1016/S0006-3495(99)76984-5.

Abstract

Fixed charges on the extracellular surface of voltage-gated ion channels influence the gating. In previous studies of cloned voltage-gated K channels, we found evidence that the functional surface charges are located on the peptide loop between the fifth transmembrane segment and the pore region (the S5-P loop). In the present study, we determine the role of individual charges of the S5-P loop by correlating primary structure with experimentally calculated surface potentials of the previously investigated channels. The results suggest that contributions to the surface potential at the voltage sensor of the different residues varies in an oscillating pattern, with the first residue of the N-terminal end of the S5-P loop, an absolutely conserved glutamate, contributing most. An analysis yields estimates of the distance between the residues and the voltage sensor, the first N-terminal residue being located at a distance of 5-6 A. To explain the results, a structural hypothesis, comprising an alpha-helical N-terminal end of the S5-P loop, is presented.

摘要

电压门控离子通道细胞外表面的固定电荷会影响通道门控。在之前对克隆的电压门控钾通道的研究中,我们发现有证据表明功能性表面电荷位于第五个跨膜片段与孔区域之间的肽环(S5-P环)上。在本研究中,我们通过将一级结构与先前研究通道的实验计算表面电位相关联,来确定S5-P环中单个电荷的作用。结果表明,不同残基对电压感受器表面电位的贡献呈振荡模式变化,S5-P环N端的第一个残基,即一个绝对保守的谷氨酸,贡献最大。分析得出了残基与电压感受器之间距离的估计值,N端第一个残基位于5-6埃的距离处。为了解释这些结果,我们提出了一个结构假说,该假说包含S5-P环的α螺旋N端。

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