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假定失活门在钠通道门控电流固定中的作用。

The role of the putative inactivation lid in sodium channel gating current immobilization.

作者信息

Sheets M F, Kyle J W, Hanck D A

机构信息

Nora Eccles Harrison Cardiovascular Research & Training Institute and The Department of Internal Medicine, University of Utah, Salt Lake City, Utah 84112, USA.

出版信息

J Gen Physiol. 2000 May;115(5):609-20. doi: 10.1085/jgp.115.5.609.

Abstract

We investigated the contribution of the putative inactivation lid in voltage-gated sodium channels to gating charge immobilization (i.e., the slow return of gating charge during repolarization) by studying a lid-modified mutant of the human heart sodium channel (hH1a) that had the phenylalanine at position 1485 in the isoleucine, phenylalanine, and methionine (IFM) region of the domain III-IV linker mutated to a cysteine (ICM-hH1a). Residual fast inactivation of ICM-hH1a in fused tsA201 cells was abolished by intracellular perfusion with 2.5 mM 2-(trimethylammonium)ethyl methanethiosulfonate (MTSET). The time constants of gating current relaxations in response to step depolarizations and gating charge-voltage relationships were not different between wild-type hH1a and ICM-hH1a(MTSET). The time constant of the development of charge immobilization assayed at -180 mV after depolarization to 0 mV was similar to the time constant of inactivation of I(Na) at 0 mV for hH1a. By 44 ms, 53% of the gating charge during repolarization returned slowly; i.e., became immobilized. In ICM-hH1a(MTSET), immobilization occurred with a similar time course, although only 31% of gating charge upon repolarization (OFF charge) immobilized. After modification of hH1a and ICM-hH1a(MTSET) with Anthopleurin-A toxin, a site-3 peptide toxin that inhibits movement of the domain IV-S4, charge immobilization did not occur for conditioning durations up to 44 ms. OFF charge for both hH1a and ICM-hH1a(MTSET) modified with Anthopleurin-A toxin were similar in time course and in magnitude to the fast component of OFF charge in ICM-hH1a(MTSET) in control. We conclude that movement of domain IV-S4 is the rate-limiting step during repolarization, and it contributes to charge immobilization regardless of whether the inactivation lid is bound. Taken together with previous reports, these data also suggest that S4 in domain III contributes to charge immobilization only after binding of the inactivation lid.

摘要

我们通过研究人类心脏钠通道(hH1a)的一个盖子修饰突变体来探究电压门控钠通道中假定的失活盖子对门控电荷固定(即复极化过程中门控电荷的缓慢返回)的贡献,该突变体将结构域III-IV连接子的异亮氨酸、苯丙氨酸和甲硫氨酸(IFM)区域中第1485位的苯丙氨酸突变为半胱氨酸(ICM-hH1a)。通过用2.5 mM 2-(三甲基铵)乙基甲硫代磺酸盐(MTSET)进行细胞内灌注,消除了融合的tsA201细胞中ICM-hH1a的残余快速失活。野生型hH1a和ICM-hH1a(MTSET)对阶跃去极化的门控电流松弛时间常数和门控电荷-电压关系并无差异。在去极化至0 mV后于-180 mV测定的电荷固定发展时间常数与hH1a在0 mV时I(Na)的失活时间常数相似。到44 ms时,复极化过程中53%的门控电荷缓慢返回;即被固定。在ICM-hH1a(MTSET)中,固定以相似的时间进程发生,但复极化时只有31%的门控电荷(关断电荷)被固定。在用抑制结构域IV-S4移动的位点3肽毒素海葵毒素A修饰hH1a和ICM-hH1a(MTSET)后,长达44 ms的预处理持续时间内未发生电荷固定。用海葵毒素A修饰的hH1a和ICM-hH1a(MTSET)的关断电荷在时间进程和幅度上与对照中ICM-hH1a(MTSET)关断电荷的快速成分相似。我们得出结论,结构域IV-S4的移动是复极化过程中的限速步骤,并且无论失活盖子是否结合,它都对电荷固定有贡献。结合先前的报道,这些数据还表明,只有在失活盖子结合后,结构域III中的S4才对电荷固定有贡献。

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