Ohler M, Köhler S, Härtwig J
European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble, France, and Arbeitsgruppe Röntgenbeugung, Institut für Physik, Humboldt-Universität Berlin, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Acta Crystallogr A. 1999 May 1;55(Pt 3):423-432. doi: 10.1107/s0108767398010794.
X-ray diffraction topographs of wafers produced by separation by implanted oxygen (SIMOX) show moiré fringes in both reflection and transmission geometry. These fringes reveal deformations of the order of 10(-6) to 10(-8) between the layer and the substrate of the SIMOX material. A new method for a quantitative analysis of moiré fringes is developed and allows reconstruction with a high sensitivity of the three components of the relative displacement field between layer and substrate directly from a set of topographs. This method is used for the interpretation of moiré topographs of entire 4 in SIMOX wafers and of regions around crystal defects. Finally, the capabilities of an analysis of moiré fringes are compared with those of the usual diffraction topo-graphy.
通过注氧隔离（SIMOX）工艺生产的硅片的X射线衍射形貌图在反射和透射几何条件下均显示出莫尔条纹。这些条纹揭示了SIMOX材料的层与衬底之间10^(-6)至10^(-8)量级的形变。开发了一种用于莫尔条纹定量分析的新方法，该方法能够直接从一组形貌图中以高灵敏度重建层与衬底之间相对位移场的三个分量。此方法用于解释完整的4英寸SIMOX硅片以及晶体缺陷周围区域的莫尔形貌图。最后，将莫尔条纹分析的能力与常规衍射形貌分析的能力进行了比较。
