Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Miotkowski I, Seong MJ, Alawadhi H, Ramdas AK
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Phys Rev Lett. 2000 Aug 14;85(7):1552-5. doi: 10.1103/PhysRevLett.85.1552.
We report a strongly nonlinear pressure dependence of the band gaps and large downward shifts of the conduction band edges as functions of composition in ZnS xTe (1-x) and ZnSe (y)Te (1-y) alloys. The dependencies are explained by an interaction between localized A1 symmetry states of S or Se atoms and the extended states of the ZnTe matrix. These results, combined with previous studies of III-N-V materials define a new, broad class of semiconductor alloys in which the introduction of highly electronegative atoms leads to dramatic modifications of the conduction band structure. The modifications are well described by the recently introduced band anticrossing model.
我们报道了在ZnSxTe(1 - x)和ZnSe(y)Te(1 - y)合金中，带隙呈现出强烈的非线性压力依赖性，以及导带边缘随成分变化而大幅向下移动。这些依赖性可通过S或Se原子的局域A1对称态与ZnTe基体的扩展态之间的相互作用来解释。这些结果与之前对III - N - V材料的研究相结合，定义了一类新的、广泛的半导体合金，其中引入高电负性原子会导致导带结构发生显著改变。这些改变可以通过最近引入的带反交叉模型得到很好的描述。
