Kegel I, Metzger TH, Lorke A, Peisl J, Stangl J, Bauer G, Garcia JM, Petroff PM
CeNS at Sektion Physik, Ludwig-Maximilians-Universitat, 80359 Munchen, Germany.
Phys Rev Lett. 2000 Aug 21;85(8):1694-7. doi: 10.1103/PhysRevLett.85.1694.
Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.
通过表面敏感的X射线衍射获得了自组装InAs/GaAs量子点的层析纳米级图像。基于倒易空间中选定区域的三维强度映射，该方法能在亚纳米尺度上给出量子点的形状、晶格参数分布以及垂直互扩散轮廓。研究发现，材料成分从量子点底部的GaAs到顶部的InAs是连续变化的。
