Fry P W, Itskevich I E, Mowbray D J, Skolnick M S, Finley J J, Barker J A, O'Reilly E P, Wilson L R, Larkin I A, Maksym P A, Hopkinson M, Al-Khafaji M, David J P, Cullis A G, Hill G, Clark J C
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom.
Phys Rev Lett. 2000 Jan 24;84(4):733-6. doi: 10.1103/PhysRevLett.84.733.
New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition of buried quantum dots from modeling of the data. We also demonstrate that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
通过斯塔克效应光谱学推导得出了关于InAs-GaAs自组装量子点中电子-空穴波函数的新信息。最出乎意料的是，结果表明空穴定域在量子点顶部，位于电子上方，这种排列与所有近期计算的预测结果相反。我们能够通过对数据进行建模来获取关于掩埋量子点结构和组成的新信息。我们还证明了激发态跃迁源于横向量子化，并且通过改变电场可以实现对量子点能量非均匀分布的调控。
