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激光诱导砷化镓中的带隙以上透明现象。

Laser-induced above-band-gap transparency in GaAs.

作者信息

Srivastava Ajit, Srivastava Rahul, Wang Jigang, Kono Junichiro

机构信息

Department of Electrical and Computer Engineering, Rice Quantum Institute, and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, USA.

出版信息

Phys Rev Lett. 2004 Oct 8;93(15):157401. doi: 10.1103/PhysRevLett.93.157401. Epub 2004 Oct 4.

Abstract

We report the observation of large (approximately 40%) laser-induced above-band-gap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrared laser pulses and its spectral shape is consistent with a laser-induced blueshift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating, in particular, that the amount of the band edge shift is approximately given by the ponderomotive potential.

摘要

我们报告了在室温下观察到砷化镓中由激光诱导的大(约40%)的带隙以上透明度。诱导透明度仅在驱动中红外激光脉冲的脉宽期间出现,其光谱形状与带边的激光诱导蓝移一致。我们基于动态弗朗兹-凯尔迪什效应的模拟重现了实验结果的显著特征,特别表明带边移动量大约由有质动力势给出。

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