Simmons MY, Hamilton AR, Pepper M, Linfield EH, Rose PD, Ritchie DA
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 OHE, United Kingdom and Semiconductor Nanofabrication Facility, University of New South Wales, Sydney 2052, Australia.
Phys Rev Lett. 2000 Mar 13;84(11):2489-92. doi: 10.1103/PhysRevLett.84.2489.
A detailed investigation of the metallic behavior in high-quality GaAs-AlGaAs two-dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ( r(s)>10) and high quality of these systems, both weak localization (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. If these quantum corrections persist down to T = 0, the results suggest that even at high r(s) there is no metallic phase in two dimensions.
对高质量砷化镓-铝镓砷二维空穴系统中金属行为的详细研究揭示了低温下电阻率存在量子修正。尽管这些系统的密度低（r(s)>10）且质量高，但在所谓的金属相中，即电阻率随温度降低而降低的相中，存在弱局域化（通过负磁阻观测到）和弱空穴-空穴相互作用（对霍尔常数进行修正）。如果这些量子修正一直持续到T = 0，结果表明即使在高r(s)时二维中也不存在金属相。
