Bockrath M, Liang W, Bozovic D, Hafner J H, Lieber C M, Tinkham M, Park H
Department of Physics, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
Science. 2001 Jan 12;291(5502):283-5. doi: 10.1126/science.291.5502.283.
We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.
我们通过输运测量和扫描栅显微镜报告了单个金属性单壁碳纳米管中缺陷的特征。通过化学气相沉积生长的相当一部分金属性纳米管在室温下表现出强烈的栅极电压依赖性电阻。扫描栅测量表明，这种行为源于随着栅极电压改变费米能级时，纳米管中缺陷引起的共振电子散射。在室温下，散射共振峰值处的反射系数被确定为约0.5。通过低温输运测量展示了由两个缺陷形成的管内量子点器件。
