Matsumoto Y, Murakami M, Shono T, Hasegawa T, Fukumura T, Kawasaki M, Ahmet P, Chikyow T, Koshihara S, Koinuma H
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
Science. 2001 Feb 2;291(5505):854-6. doi: 10.1126/science.1056186.
Dilute magnetic semiconductors and wide gap oxide semiconductors are appealing materials for magnetooptical devices. From a combinatorial screening approach looking at the solid solubility of transition metals in titanium dioxides and of their magnetic properties, we report on the observation of transparent ferromagnetism in cobalt-doped anatase thin films with theconcentration of cobalt between 0 and 8%. Magnetic microscopy images reveal a magnetic domain structure in the films, indicating the existence of ferromagnetic long-range ordering. The materials remain ferromagnetic above room temperature with a magnetic moment of 0.32 Bohr magnetons per cobalt atom. The film is conductive and exhibits a positive magnetoresistance of 60% at 2 kelvin.
稀磁半导体和宽禁带氧化物半导体是磁光器件中颇具吸引力的材料。通过一种组合筛选方法,研究过渡金属在二氧化钛中的固溶度及其磁性,我们报告了在钴掺杂浓度为0%至8%的锐钛矿型薄膜中观察到的透明铁磁性。磁显微镜图像揭示了薄膜中的磁畴结构,表明存在铁磁长程有序。这些材料在室温以上仍保持铁磁性,每个钴原子的磁矩为0.32玻尔磁子。该薄膜具有导电性,在2开尔文时表现出60%的正磁阻。