He Tao, He Jianli, Lu Meng, Chen Bo, Pang Harry, Reus William F, Nolte Whitney M, Nackashi David P, Franzon Paul D, Tour James M
Department of Chemistry, Rice University, Houston, Texas 77005, USA.
J Am Chem Soc. 2006 Nov 15;128(45):14537-41. doi: 10.1021/ja063571l.
We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.
我们通过在无氧化物的氢钝化硅表面接枝单层分子，可控地调制了伪金属氧化物半导体场效应晶体管（MOSFET）中的漏极电流（I(D)）和阈值电压（V(T)）。一系列从强π电子供体到强π电子受体的电控分子被共价连接到晶体管的沟道区域。器件电导因此根据接枝分子的给电子能力进行了系统调整，这归因于器件沟道与分子之间的电荷转移。这种表面接枝方案可能成为在未来技术节点控制小型硅器件电子特性的一种有用方法。
