Geelhaar L, Márquez J, Kratzer P, Jacobi K
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany.
Phys Rev Lett. 2001 Apr 23;86(17):3815-8. doi: 10.1103/PhysRevLett.86.3815.
The atomic structure of GaAs(2 5 11), a hitherto unknown stable surface, has been determined by in situ scanning tunneling microscopy and first-principles electronic structure calculations. This orientation is located within the stereographic triangle, i.e., far away from all low-index surfaces. A low-energy ( 1x1) reconstruction containing arsenic dimers forms on the surface. The analysis of the surface structure shows that, for semiconductor surfaces, the gain in stability due to minimization of the number of dangling bonds is more important than the gain from rendering a semiconducting ground state.
砷化镓（2 5 11）这一迄今未知的稳定表面的原子结构，已通过原位扫描隧道显微镜和第一性原理电子结构计算得以确定。该取向位于极射赤面投影三角形内，即远离所有低指数表面。表面形成了包含砷二聚体的低能（1x1）重构。表面结构分析表明，对于半导体表面，通过使悬空键数量最小化而获得的稳定性增益，比从呈现半导体基态中获得的增益更为重要。
