Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P
Department of Chemistry, University of California, Environmental Energy Technology Division, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Science. 2001 Jun 8;292(5523):1897-9. doi: 10.1126/science.1060367.
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.
已证明在半导体纳米线阵列中可实现室温紫外激光发射。通过简单的气相输运和凝聚过程，在蓝宝石衬底上生长出自组织的、沿<0001>方向的氧化锌纳米线。这些宽带隙半导体纳米线形成了自然激光腔，其直径在20至150纳米之间变化，长度可达10微米。在光激发下，观察到在385纳米处有表面发射激光作用，发射线宽小于0.3纳米。纳米线的化学灵活性和一维性使其成为理想的微型激光光源。这些短波长纳米激光器可能有无数应用，包括光学计算、信息存储和微分析。
