Traverse A, Delobbe A, Zanghi D, Girardeau T, Flank A M
Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Université Paris-Sud, Orsay, France.
J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):499-501. doi: 10.1107/s0909049500012644.
Si3N4 amorphous thin layers prepared by sputtering have been implanted either with Cu or with Fe ions. X-ray absorption spectroscopy was performed at the Si K edge to characterise the electronic empty states of p character, the structural state of the initial layers and the modifications around Si induced by implantation and a post-annealing treatment. We show that the energy deposition process mainly leads to a reorganisation of the second coordination shell around Si, i.e. concerns the Si-Si bonds.
通过溅射制备的非晶态氮化硅薄膜已被注入铜离子或铁离子。在硅K边进行了X射线吸收光谱分析，以表征p态电子空态、初始薄膜的结构状态以及注入和退火处理后硅周围的变化。我们表明，能量沉积过程主要导致硅周围第二配位层的重新排列，即涉及硅-硅键。
