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铁离子注入对CoSb薄膜热电性能和电子结构的影响。

Effect of Fe ion implantation on the thermoelectric properties and electronic structures of CoSb thin films.

作者信息

Masarrat Anha, Bhogra Anuradha, Meena Ramcharan, Bala Manju, Singh Ranveer, Barwal Vineet, Dong Chung-Li, Chen Chi-Liang, Som T, Kumar Ashish, Niazi A, Asokan K

机构信息

Inter University Accelerator Centre Aruna Asaf Ali Marg New Delhi-110067 India

Department of Physics, Jamia Millia Islamia New Delhi-110025 India.

出版信息

RSC Adv. 2019 Nov 6;9(62):36113-36122. doi: 10.1039/c9ra06873b. eCollection 2019 Nov 4.

DOI:10.1039/c9ra06873b
PMID:35540568
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9074955/
Abstract

In the present study, thin films of single-phase CoSb were deposited onto Si(100) substrates pulsed laser deposition (PLD) method using a polycrystalline target of CoSb. These films were implanted by 120 keV Fe-ions with three different fluences: 1 × 10, 2.5 × 10 and 5 × 10 ions per cm. All films were characterised by X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), Rutherford backscattering (RBS) spectrometry and X-ray absorption spectroscopy (XAS). XRD data revealed that the ion implantation decreased the crystalline nature of these films, which are recovered after the rapid thermal annealing process. The Seebeck coefficient vary with the fluences in the temperature range of 300 K to 420 K, and is found to be highest (, 254 μV K) at 420 K for the film implanted with 1 × 10 ions per cm. The high and low resistivity lead to the highest power factor for the film implanted with 1 × 10 ions per cm (, 700 μW m K) at 420 K. The changing of the sign of from negative for the pristine film to positive for the Fe-implanted samples confirm that the Fe ions are electrically active and act as electron acceptors by replacing the Co atoms. XAS measurements confirm that the Fe ions occupied the Co site in the cubic frame of the skutterudite and exist in the 3+ oxidation state in this structure.

摘要

在本研究中，使用多晶CoSb靶材通过脉冲激光沉积（PLD）方法将单相CoSb薄膜沉积在Si(100)衬底上。这些薄膜用120 keV的铁离子以三种不同的注量进行注入：每平方厘米1×10、2.5×10和5×10个离子。所有薄膜均通过X射线衍射（XRD）、拉曼光谱、原子力显微镜（AFM）、卢瑟福背散射（RBS）光谱和X射线吸收光谱（XAS）进行表征。XRD数据表明，离子注入降低了这些薄膜的结晶性，而这种结晶性在快速热退火过程后得以恢复。塞贝克系数在300 K至420 K的温度范围内随注量变化，并且发现对于每平方厘米注入1×10个离子的薄膜，在420 K时塞贝克系数最高（254 μV K）。高迁移率和低电阻率使得每平方厘米注入1×10个离子的薄膜在420 K时具有最高的功率因数（700 μW m K）。从原始薄膜的负值变为铁注入样品的正值，这证实了铁离子具有电活性，并通过取代Co原子充当电子受体。XAS测量证实，铁离子占据了方钴矿立方框架中的Co位点，并在此结构中以3+氧化态存在。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a9a0/9074955/8618475814af/c9ra06873b-f10.jpg
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