Enhanced terrace stability for preparation of step-free Si(001)-(2 x 1) surfaces.

We show that depositing Si while annealing patterned Si(001)-(2 x 1) substrates at sublimation temperatures enhances terrace stability, permitting larger step-free areas to be produced in a given time than possible by annealing alone. We confirm this enhanced terrace stability using real-time low-energy electron microscopy observations, and quantitative microscopic modeling of step dynamics. Our measurements can be used to estimate the lateral variation in adatom concentration across large terraces, and to estimate an adatom diffusion length lambda approximately 10-30 microm at 1000 degrees C.