Nielsen J F, Pelz J P, Hibino H, Hu C W, Tsong I S
Department of Physics, Ohio State University, Columbus, Ohio 43210, USA.
Phys Rev Lett. 2001 Sep 24;87(13):136103. doi: 10.1103/PhysRevLett.87.136103. Epub 2001 Sep 11.
We show that depositing Si while annealing patterned Si(001)-(2 x 1) substrates at sublimation temperatures enhances terrace stability, permitting larger step-free areas to be produced in a given time than possible by annealing alone. We confirm this enhanced terrace stability using real-time low-energy electron microscopy observations, and quantitative microscopic modeling of step dynamics. Our measurements can be used to estimate the lateral variation in adatom concentration across large terraces, and to estimate an adatom diffusion length lambda approximately 10-30 microm at 1000 degrees C.
我们表明，在升华温度下对图案化的Si(001)-(2×1)衬底进行退火时沉积Si可增强台面稳定性，使得在给定时间内能够产生比仅通过退火更大的无台阶区域。我们通过实时低能电子显微镜观察以及台阶动力学的定量微观建模证实了这种增强的台面稳定性。我们的测量结果可用于估计大台面上吸附原子浓度的横向变化，并估计在1000℃时吸附原子的扩散长度λ约为10 - 30微米。
