Rullier-Albenque F, Alloul H, Tourbot R
SPEC, Orme des Merisiers, CEA, 91191 Gif sur Yvette, France.
Phys Rev Lett. 2001 Oct 8;87(15):157001. doi: 10.1103/PhysRevLett.87.157001. Epub 2001 Sep 21.
We report resistivity measurements in underdoped YBa 2Cu3O6.6 and overdoped Tl 2Ba2CuO6+x single crystals in which the concentration of defects in the CuO (2) planes is controlled by electron irradiation. Low T upturns of the resistivity are observed in both cases for large defect content. In the Tl compound the decrease of conductivity scales as expected from weak localization theory. On the contrary, in YBa 2Cu3O6.6 the much larger low T contribution to the resistivity is proportional to the defect content and might then be associated with a Kondo-like spin flip scattering term. This would be consistent with the results on the magnetic properties induced by spinless defects.
我们报告了对欠掺杂的YBa₂Cu₃O₆.₆和过掺杂的Tl₂Ba₂CuO₆₊ₓ单晶进行的电阻率测量，其中CuO₂平面中的缺陷浓度由电子辐照控制。在两种情况下，当缺陷含量较大时，均观察到电阻率在低温下出现上升。在Tl化合物中，电导率的降低如弱局域化理论所预期的那样呈比例关系。相反，在YBa₂Cu₃O₆.₆中，电阻率在低温下的贡献要大得多，与缺陷含量成正比，因此可能与类似近藤效应的自旋翻转散射项有关。这与无自旋缺陷诱导的磁性性质的结果一致。
