通过在经氖辐照非晶化的碳化硅中退火进行重结晶。

Recrystallization by annealing in SiC amorphized with Ne irradiation.

作者信息

Aihara Jun, Hojou Kiichi, Furuno Shigemi, Ishihara Masahiro, Hayashi Kimio

机构信息

Japan Atomic Energy Research Institute, Higashi-ibaraki-gun, Ibaraki-ken.

出版信息

J Electron Microsc (Tokyo). 2002;51(2):93-8. doi: 10.1093/jmicro/51.2.93.

DOI:10.1093/jmicro/51.2.93

PMID:12005168

Abstract

Alpha-silicon carbide was irradiated with Ne+ ions at room temperature to various fluences up to 7.5 x 10(20) Ne+ m(-2) and then isochronally annealed under observation with a transmission electron microscope. In all cases, thin regions were completely amorphized by irradiation and epitaxial growth occurred from the residual crystalline region by subsequent annealing. Crystal nucleation occurred with annealing at 1000 degrees C in the cases of 3.8 x 10(20) and 7.5 x 10(20) Ne+ m(-2) irradiation, and at 1100 degrees C in the cases of 1.3 x 10(20) and 2.3 x 10(20) Ne+ m(-2) irradiation. Growth or formation of bubbles was observed with annealing at 1000 degrees C after 1.3 x 10(20), 2.3 x 10(20), and 3.8 x 10(20) Ne+ m(-2) irradiation.

摘要

在室温下，用Ne+离子对α-碳化硅进行辐照，使其达到高达7.5×10²⁰ Ne⁺ m⁻²的不同注量，然后在透射电子显微镜观察下进行等时退火。在所有情况下，薄区域通过辐照完全非晶化，随后退火时从残余晶体区域发生外延生长。在3.8×10²⁰和7.5×10²⁰ Ne⁺ m⁻²辐照的情况下，在1000℃退火时发生晶体成核；在1.3×10²⁰和2.3×10²⁰ Ne⁺ m⁻²辐照的情况下，在1100℃退火时发生晶体成核。在1.3×10²⁰、2.3×10²⁰和3.8×10²⁰ Ne⁺ m⁻²辐照后，在1000℃退火时观察到气泡的生长或形成。