Shen Qiang, Zhou Wei, Ran Guang, Li Ruixiang, Feng Qijie, Li Ning
College of Energy, Xiamen University, Xiamen 361102, Fujian, China.
China Academy of Engineering Physics, Mianyang 621900, Sichuan, China.
Materials (Basel). 2017 Jan 24;10(2):101. doi: 10.3390/ma10020101.
The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 10 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium ion irradiation. The size of gas bubbles increased with increasing annealing time and temperature and finally reached stable values at a given annealing temperature. According to the relationship between the bubble radii and annealing time, an empirical formula for calculating the bubble radii at the annealing temperature ranged from 600 to 1400 °C was given by fitting the experiment data. Planar bubble clusters (discs) were found to form on (0001) crystal plane at both sides of the bubble layer when the annealing temperature was at the range of 800-1200 °C. The mechanism of bubble growth during post-implantation annealing and the formation of bubble discs were also analyzed and discussed.
具有[0001]晶向的单晶6H-SiC在400℃下以1×10¹⁵离子/cm²的注量被400 keV的He⁺离子辐照后，分别在600、900、1200和1400℃下进行不同时长的退火处理。通过透射电子显微镜研究了氦泡和盘状物的演变情况。氦离子辐照后形成了一个分布有细小氦泡的辐照层，其宽度约为170 nm。气泡尺寸随退火时间和温度的增加而增大，最终在给定的退火温度下达到稳定值。根据气泡半径与退火时间的关系通过拟合实验数据给出了一个用于计算600至1400℃退火温度下气泡半径的经验公式。当退火温度在800 - 12,00℃范围内时，发现在气泡层两侧的(0001)晶面上形成了平面气泡簇（盘状物）。还对注入后退火过程中气泡生长的机制以及气泡盘的形成进行了分析和讨论。
