Wang Tao, Yang Zhen, Li Bingsheng, Xu Shuai, Liao Qing, Ge Fangfang, Zhang Tongmin, Li Jun
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China.
Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-Sen University, Zhuhai 519082, China.
Materials (Basel). 2020 Dec 15;13(24):5723. doi: 10.3390/ma13245723.
Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as "ion-cut" or "Smart-Cut". It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H to a fluence of 5 × 10 H/cm at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency "ion-cut" technology.
碳化硅（SiC）是半导体行业和核电站中使用的一种重要材料。注入H离子的SiC晶片在退火后可在损伤层内进行切割，以便于将薄的SiC片转移到处理晶片上。这个过程被称为“离子切割”或“智能切割”。研究H注入SiC在退火前后的剥离效率和残余晶格缺陷是很有价值的。在本文中，通过拉曼光谱和透射电子显微镜相结合的方法，研究了在450℃和900℃下注入剂量为5×10¹⁵ H/cm²的H离子的6H-SiC中的晶格损伤。在注入后的样品中，通过拉曼光谱和透射电子显微镜观察到了动态退火引起的不同程度的损伤。使用原子力显微镜和扫描白光干涉仪观察样品表面形貌。在450℃注入然后在1100℃退火15分钟的样品中观察到表面气泡和剥离，而在900℃注入且未经进一步热处理的样品中也出现了表面气泡和剥离。这一发现可归因于高温注入过程中血小板内部压力的增加。研究了剥离效率、位置以及剥离后的粗糙度，并讨论了可能的原因。这项工作为进一步理解和改进高效“离子切割”技术提供了依据。
