Pan W, Stormer H L, Tsui D C, Pfeiffer L N, Baldwin K W, West K W
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2002 Apr 29;88(17):176802. doi: 10.1103/PhysRevLett.88.176802. Epub 2002 Apr 10.
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu = 2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of these developing fractional quantum Hall (FQHE) states appears only above a filling-factor-specific temperature. This can be interpreted as the melting of an electron crystal and subsequent FQHE liquid formation. The observed sequence of FQHE states follows the series of composite fermion states emanating from nu = 1/6 and nu = 1/8.
在二维电子系统的低朗道能级填充情况下，通常与电子晶体的形成相关，我们在填充因子ν = 2/11、3/17、3/19、2/13、1/7、2/15、2/17和1/9时观察到Rxx中的局部最小值。这些逐渐形成的分数量子霍尔（FQHE）态中的每一个仅在特定于填充因子的温度之上出现。这可以解释为电子晶体的熔化以及随后FQHE液体的形成。观察到的FQHE态序列遵循从ν = 1/6和ν = 1/8发出的复合费米子态系列。
