Heremans Joseph P, Thrush Christopher M, Morelli Donald T, Wu Ming-Cheng
Delphi Research Labs, Delphi Corporation, Shelby Township, Michigan 48315, USA.
Phys Rev Lett. 2002 May 27;88(21):216801. doi: 10.1103/PhysRevLett.88.216801. Epub 2002 May 7.
Because of the increase in the electronic density of states in low-dimensional systems, semiconductor quantum wires constitute a most promising thermoelectric material. We report here the first experimental observation of a very large enhancement of the thermoelectric power of composites containing bismuth nanowires with diameters of 9 and 15 nm, embedded in porous alumina and porous silica. The temperature dependence of the electrical resistance shows that the samples are semiconductors with energy gaps between 0.17 and 0.4 eV, consistent with the theoretical predictions.
由于低维系统中态电子密度的增加,半导体量子线构成了一种最有前途的热电材料。我们在此报告首次通过实验观察到,嵌入多孔氧化铝和多孔二氧化硅中的直径为9纳米和15纳米的铋纳米线复合材料的热电功率有极大增强。电阻的温度依赖性表明,这些样品是能隙在0.17至0.4电子伏特之间的半导体,这与理论预测一致。