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通过滤波器光学厚度的生长后修饰实现通带移位滤波器。

Passband-shifting filters through postgrowth modification of filter optical thickness.

作者信息

Patel Rajesh R, Krol Denise M, Bond Steven W, Pocha Michael D, Meyer Glenn A, Behymer Elaine, Sperry Victor

机构信息

Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 01775, USA.

出版信息

J Opt Soc Am A Opt Image Sci Vis. 2002 Dec;19(12):2484-94. doi: 10.1364/josaa.19.002484.

Abstract

We describe a postgrowth method to produce passband filters with different center wavelengths from a single growth run by irreversibly changing the refractive index of a layer or a series of layers within the filter. This leads to a new type of filter, the passband-shifting filter, whose center wavelength can be irreversibly shifted from lambda0 to lambda0 - deltalambda after the filter has been grown. The passband shift can be controlled exactly by proper design of the multilayer. We present the theory behind passband-shifting-filter design along with transfer-matrix simulations and preliminary experimental results for a two-cavity filter, using lateral oxidation of AlxGa1-x As-based materials to effect the passband shift.

摘要

我们描述了一种生长后方法,通过不可逆地改变滤波器内一层或一系列层的折射率,从单次生长过程中制备具有不同中心波长的带通滤波器。这产生了一种新型滤波器,即通带移位滤波器,其中心波长在滤波器生长后可从λ0不可逆地移位至λ0 - Δλ。通带移位可通过多层结构的合理设计精确控制。我们阐述了通带移位滤波器设计背后的理论,以及使用基于AlxGa1-x As材料的横向氧化来实现通带移位的双腔滤波器的传输矩阵模拟和初步实验结果。

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