Weigel Peter O, Zhao Jie, Fang Kelvin, Al-Rubaye Hasan, Trotter Douglas, Hood Dana, Mudrick John, Dallo Christina, Pomerene Andrew T, Starbuck Andrew L, DeRose Christopher T, Lentine Anthony L, Rebeiz Gabriel, Mookherjea Shayan
Opt Express. 2018 Sep 3;26(18):23728-23739. doi: 10.1364/OE.26.023728.
We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.
我们展示了一种基于代工制造的硅光子学的超高带宽马赫-曾德尔电光调制器（EOM），它采用传统光刻和晶圆级制造工艺，在200°C下与铌酸锂（LN）薄膜进行氧化物键合。我们的设计集成了硅光子学的光输入/输出以及诸如定向耦合器和低半径弯曲等光学组件。无需对铌酸锂薄膜进行蚀刻或图案化处理。这种混合硅-铌酸锂马赫-曾德尔调制器实现了超过106 GHz的3分贝电调制带宽，这是所有硅光子或铌酸锂（相位）调制器中最高的。
