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PbSe量子点薄膜中的电子和空穴注入

Electron and hole injection in PbSe quantum dot films.

作者信息

Wehrenberg Brian L, Guyot-Sionnest Philippe

机构信息

James Franck Institute, The University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637, USA.

出版信息

J Am Chem Soc. 2003 Jul 2;125(26):7806-7. doi: 10.1021/ja035369d.

DOI:10.1021/ja035369d
PMID:12822991
Abstract

Electrochemical methods are used to inject charge into films of colloidal semiconductor nanocrystals of PbSe. The injection of electrons and holes into quantum confined states is confirmed by monitoring changes in the IR absorption spectrum. Holes are injected into the 1Sh state, causing a bleach of the 1Sh-1Se and 1Sh-1Pe interband transitions and inducing a 1Sh-1Ph intraband absorption. Electrons can be sequentially injected into the 1Se and 1Pe states, first bleaching the 1Sh-1Se and 1Ph-1Se interband transitions and inducing a 1Se-1Pe intraband absorption, and then bleaching the 1Sh-1Pe transition and inducing a 1Pe-1De intraband absorption.

摘要

电化学方法用于向PbSe胶体半导体纳米晶体薄膜中注入电荷。通过监测红外吸收光谱的变化来确认电子和空穴注入到量子受限态。空穴注入到1Sh态,导致1Sh - 1Se和1Sh - 1Pe带间跃迁的漂白,并诱导1Sh - 1Ph带内吸收。电子可以依次注入到1Se和1Pe态,首先漂白1Sh - 1Se和1Ph - 1Se带间跃迁并诱导1Se - 1Pe带内吸收,然后漂白1Sh - 1Pe跃迁并诱导1Pe - 1De带内吸收。

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