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具有稳态带内跃迁的自掺杂胶体半导体纳米晶体。

Self-doped colloidal semiconductor nanocrystals with intraband transitions in steady state.

机构信息

Department of Chemistry, Korea University, Seoul 02841, Republic of Korea.

出版信息

Chem Commun (Camb). 2018 Jul 26;54(61):8435-8445. doi: 10.1039/c8cc02488j.

Abstract

The tunable bandgap energy has been recognized as a prominent feature of the colloidal semiconductor nanocrystal, also called the colloidal quantum dot (CQD). Due to the broken degeneracy caused by the quantum confinement effect, the electronic states of the conduction band (CB) are separated by a few hundred meV. The electronic transition occurring in the conduction band is called the intraband transition and has been regarded as a fast electron relaxation process that cannot be readily observed under steady state. However, recent progress in the studies of intraband transitions allowed the observation of the mid-IR intraband transition in steady state and ambient condition, providing a pathway to exploit the mid-IR electronic transition for various optoelectronic applications. The observation of the steady state intraband transitions has been possible due to the electron filling of the lowest electronic state (1Se) of the conduction band in the semiconductor nanocrystal. Specifically, the nanocrystals are "self-doped" with electrons through chemical synthesis - that is, without the need of adding heterogeneous impurity or applying an electrical potential. In this feature article, we summarize the recent advances in the study on intraband electronic transitions along with the interesting findings on the magnetic and electronic properties of the self-doped colloidal metal chalcogenide semiconductor nanocrystals. The mid-IR intraband transitions of non-toxic nanocrystals, which exclude the toxic mercury and cadmium constituents, are also highlighted, which hold promise for safer applications utilizing the higher quantum states of nanocrystals.

摘要

可调带隙能量已被认为是胶体半导体纳米晶体(也称为胶体量子点,CQD)的突出特征。由于量子限制效应引起的简并度破坏,导带(CB)的电子态被分离成几百毫电子伏特。发生在导带中的电子跃迁称为带内跃迁,被认为是一种快速的电子弛豫过程,在稳态下不易观察到。然而,最近对带内跃迁的研究进展使得在稳态和环境条件下观察到中红外带内跃迁成为可能,为利用中红外电子跃迁进行各种光电应用提供了途径。稳态带内跃迁的观察之所以成为可能,是因为半导体纳米晶体中导带的最低电子态(1Se)被电子填充。具体来说,纳米晶体通过化学合成“自掺杂”电子,即不需要添加异质杂质或施加电势。在这篇专题文章中,我们总结了最近在带内电子跃迁研究方面的进展,以及对自掺杂胶体金属硫属化物半导体纳米晶体的磁性和电子性质的有趣发现。我们还强调了无毒纳米晶体的中红外带内跃迁,这些纳米晶体排除了有毒的汞和镉成分,有望在利用纳米晶体更高的量子态进行更安全的应用方面取得进展。

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