使用单色仪和高性能光谱仪的高分辨率电子能量损失谱：V2O5的电子能量损失近边结构与近边X射线吸收精细结构的比较及能带结构计算

High resolution EELS using monochromator and high performance spectrometer: comparison of V2O5 ELNES with NEXAFS and band structure calculations.

作者信息

Su D S, Zandbergen H W, Tiemeijer P C, Kothleitner G, Hävecker M, Hébert C, Knop-Gericke A, Freitag B H, Hofer F, Schlögl R

机构信息

Department of Inorganic Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, D-14195 Berlin, Germany.

出版信息

Micron. 2003;34(3-5):235-8. doi: 10.1016/s0968-4328(03)00033-7.

DOI:10.1016/s0968-4328(03)00033-7

PMID:12895495

Abstract

Using single crystal V2O5 as a sample, we tested the performance of the new aberration corrected GATAN spectrometer on a monochromatised 200 kV FEG FEI (S)TEM. The obtained V L and O K ELNES were compared with that obtained in a common GATAN GIF and that in the new spectrometer, without monochromatised beam. The performance of the new instrumentation is impressive: recorded with an energy-resolution of 0.22 eV, the V L(3) edge reveals all the features due to the bulk electronic structure, that are also revealed in near-edge X-ray absorption fine structure (NEXAFS) with a much higher energy-resolution (0.08 eV). All features of the ELNES and NEXAFS are in line with a theoretical spectrum derived from band-structure calculations.

摘要

以单晶V2O5为样品，我们在一台单色化的200 kV场发射枪FEI（S）TEM上测试了新型像差校正GATAN光谱仪的性能。将获得的V L和O K电子能量损失近边结构（ELNES）与在普通GATAN GIF中以及在没有单色化束流的新型光谱仪中获得的结果进行了比较。新仪器的性能令人印象深刻：在能量分辨率为0.22 eV的情况下记录，V L(3) 边揭示了由于体电子结构产生的所有特征，这些特征在能量分辨率高得多（0.08 eV）的近边X射线吸收精细结构（NEXAFS）中也能揭示出来。ELNES和NEXAFS的所有特征都与从能带结构计算得出的理论光谱一致。