Murakami Shuichi, Nagaosa Naoto, Zhang Shou-Cheng
Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Science. 2003 Sep 5;301(5638):1348-51. doi: 10.1126/science.1087128. Epub 2003 Aug 7.
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.
尽管微观物理定律在时间箭头反转下是不变的，但大多数设备中的能量和信息传输却是不可逆过程。正是这种不可逆性导致了电子设备中的固有损耗，并限制了量子计算的可能性。我们从理论上预测，在室温下，电场可在诸如硅、锗和砷化镓等空穴掺杂半导体中诱导出大量无损耗的量子自旋电流。基于量子霍尔效应的推广，所预测的效应可实现高效的自旋注入，而无需金属铁磁体。这里发现的原理可使量子自旋电子器件具备集成的信息处理和存储单元，以低功耗运行并执行可逆量子计算。
